Partner(Cello)

Nasca ICP-RIE System
1.III-V Compound 
(GaN,GaAs,InP,SiC,...etc)
2.MEMS
(Si,SiO 2Deep Etching)

3.Advanced Package
(Wafer Thinning,Via Etching)
4.Optical Device
(Quartz Grating Etching)

 

Aegis PECVD System

1.SiO2 Hard Mask
(for Wet/Dry Etching)
2.SiO2 film for Low-Temp. 
Passivation Layer

3.Si3N4film for Passivation Layer

 4.SiC,TEOS Oxide
  

 


Process Applications
Without Intermediate Layer:

Direct Bonding (SOI)

Anodic Bonding (450oC, 1000V)

With Intermediate Layer:

Eutectic Bonding(Si/Au,320oC)

Adhesive Bonding(Epoxy,140oC)

Glass Frit Bonding

    (Baking, 1 Bar,450oC)

 


 

 

 

 

 


Sputter 

1.  Film process  

(TiW / Au, Ti / Cu, NiCr

  Ni /Au, ITO, TaN, PZT)

2.  High Precision Thin Film

     Deposition

     ( Non-Unifomity < 5%)

3.Capacity

     ( 1 pcs / 2”~ Max.6” wafer )

4. Low CoO


1.Thermal Evaporation special for Lift-Off process

2.High Precision Thin Film
Deposition
(
Unifomity < ± 5%)
3.High Reliability and
Repeatable
4.Low CoO